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www.irf.com 1 hexfet ? power mosfet this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. s d g description advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free features IRF1404ZPBF irf1404zspbf irf1404zlpbf d 2 pak irf1404zspbf to-220ab IRF1404ZPBF to-262 irf1404zlpbf absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (s ilicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v (p ackage l imited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r 0. r cs case-to-sink, flat greased surface 0.50 ??? r ja junction-to-ambient ??? 62 r ( ??? 40 300 (1.6mm from case ) 10 lbf in (1.1n m) c/w max. 180
120
710 120
-55 to + 175 480 330 see fig.12a, 12b, 15, 16 200 1.3 20 v (br)dss 40v r ds(on) typ. 2.7m max. 3.7m i d (silicon limited) 180a i d (package limited) 120a pd - 96040c

2 www.irf.com electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.033 ??? v/c r ds(on) static drain-to-source on-resistance ??? 2.7 3.7 m ( .0 .0 10 0 a ??? ??? 250 i gs s gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 q g total gate charge ??? 100 150 q gs gate-to-source charge ??? 31 ??? nc q gd gate-to-drain ("miller") charge ??? 42 ??? t d(on) turn-on delay time ??? 18 ??? t r rise time ??? 110 ??? t d(off) turn-off delay time ??? 36 ??? ns t f fall time ??? 58 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 4340 ??? c oss output capacitance ??? 1030 ??? c rs s reverse transfer capacitance ??? 550 ??? pf c oss output capacitance ??? 3300 ??? c oss output capacitance ??? 920 ??? c oss eff. effective output capacitance ??? 1350 ??? source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? 120 (body diode) a i sm pulsed source current ??? ??? 750 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 28 42 ns q rr reverse recovery charge ??? 34 51 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. v ds = 25v, i d = 75a** i d = 75a** v ds = 32v conditions v gs = 10v v gs = 0v t j = 25c, i s = 75a**,v gs = 0v t j = 25c, i f = 75a**, v dd = 20v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 75a ** v ds = v gs , i d = 150 a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 32v, ? = 1.0mhz v gs = 0v, v ds = 0v to 32v v gs = 10v v dd = 20v i d = 75a** r g = 3.0 v ds = 25v ? = 1.0mhz

www.irf.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 25c

0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20 s pulse width tj = 175c

0 40 80 120 160 i d, drain-to-source current (a) 0 40 80 120 160 200 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 15v 20 s pulse width 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 v gs , gate-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 15v 20 s pulse width

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 40 80 120 160 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v vds= 20v i d = 75a 0.2 0.6 1.0 1.4 1.8 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 25 50 75 100 125 150 175 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a ) limited by package

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j )
-75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 2.0 3.0 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a

www.irf.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 10000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 75a

8 www.irf.com fig 17.
for n-channel hexfet power mosfets !"# ! ? $% " # ? "& # ? $#'(#% " # # !)*# p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? "+," &&#"-. ? +#!*#/#! 0 ? % &&#"-122 ? 0 3#+#0 "##! v ds 90% 10% v gs t d(on) t r t d(off) t f &!#4"5 1 6! 1 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms

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international part number rectifier lot code as s e mb l y logo year 0 = 2000 dat e code we e k 19 line c lot code 1789 example: this is an irf1010 note: "p" in assembly line position i ndicates "l ead - f ree" in the assembly line "c" assembled on ww 19, 2000 notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

10 www.irf.com

dat e code ye ar 0 = 2000 week 02 a = assembly site code rectifier internat ional part number p = designates lead - free product (opt ional) f530s in the assembly line "l" as s e mb l e d on ww 02 , 20 0 0 this is an irf530s with lot code 8024 international logo rectifier lot code assembly year 0 = 2000 part number dat e code line l week 02 or f 530s logo assembly lot code

notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

www.irf.com 11 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches) logo rectifier int ernational lot code assembly logo rectifier international dat e code week 19 year 7 = 1997 part number a = assembly site code or product (optional) p = de s i gnat e s l e ad- f r e e e xample: t his is an irl3103l lot code 1789 assembly part numb e r dat e code week 19 line c lot code ye ar 7 = 1997 as s e mbl ed on ww 19, 1997 in the assembly line "c" notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf1404z.pdf 2. for the most current drawing please refer to ir website at http://www.irf.com/package/

12 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for theindustrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/2012 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.11mh r g = 25 , i as = 75a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production.
this is only applied to to-220ab pakcage. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994.
to-220 device will have an rth value of 0.65c/w. calculated continuous current based on maximum allowable junction temperature. bond wire current limit is 120a. note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. all ac and dc test condition based on former package limited current of 75a.
! " 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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